To prevent exposure of wiring without increasing processes.
An etching resist 28 having a thick first part 24 and a thin second part 26 is formed on a metal layer 22. A semiconductor layer 20 and the metal layer 22 are patterned by etching through the etching resist 28 to form wiring 30 from the metal layer 22, and a part under the wiring 30 of the semiconductor layer 20 is left as it is. The wiring 30 is subjected to electrical inspection. The second part 26 is removed and the first part 24 is left as it is. The wiring 30 is patterned so as to be separated into a drain electrode 32 and a source electrode 34 by selective etching for leaving the semiconductor layer 20 as it is through the left first part 24. A substrate 10 is cut. In a process for patterning the wiring 30, etching is performed so as to cut the wiring 30 so that the semiconductor layer 20 is left as it is, on a position furthermore in the cutting line direction of the substrate 10 than the drain electrode 32 or the source electrode 34.
SATO MASASHI
WATANABE YOSHIKI
IWATO HIROAKI
HIRATA MASASHI
JP2008159643A | 2008-07-10 | |||
JP2006013513A | 2006-01-12 | |||
JP2008300755A | 2008-12-11 | |||
JP2006194927A | 2006-07-27 | |||
JP2003177419A | 2003-06-27 | |||
JP2008275937A | 2008-11-13 | |||
JP2009025788A | 2009-02-05 | |||
JPH11282011A | 1999-10-15 | |||
JPH1020288A | 1998-01-23 | |||
JPH1039297A | 1998-02-13 | |||
JP2008159643A | 2008-07-10 | |||
JP2006013513A | 2006-01-12 | |||
JP2008300755A | 2008-12-11 | |||
JP2006194927A | 2006-07-27 | |||
JP2003177419A | 2003-06-27 | |||
JP2008275937A | 2008-11-13 | |||
JP2009025788A | 2009-02-05 | |||
JPH11282011A | 1999-10-15 | |||
JPH1020288A | 1998-01-23 | |||
JPH1039297A | 1998-02-13 |
Next Patent: DISPLAY DEVICE, AND METHOD OF MANUFACTURING THE SAME