Title:
表示装置
Document Type and Number:
Japanese Patent JP6749974
Kind Code:
B2
Abstract:
An object is to increase an aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over one substrate. The driver circuit portion includes a channel-etched thin film transistor for a driver circuit, in which a source electrode and a drain electrode are formed using metal and a channel layer is formed of an oxide semiconductor, and a driver circuit wiring formed using metal. The display portion includes a channel protection thin film transistor for a pixel, in which a source electrode layer and a drain electrode layer are formed using an oxide conductor and a semiconductor layer is formed of an oxide semiconductor, and a display portion wiring formed using an oxide conductor.
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Inventors:
Shunpei Yamazaki
Junichiro Sakata
Hiroyuki Miyake
Hideaki Kuwahara
Kawamata Ikuko
Junichiro Sakata
Hiroyuki Miyake
Hideaki Kuwahara
Kawamata Ikuko
Application Number:
JP2018150645A
Publication Date:
September 02, 2020
Filing Date:
August 09, 2018
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
G09F9/30; G02F1/1368; H01L29/786; H05B44/00
Domestic Patent References:
| JP2008211184A | ||||
| JP2007123861A | ||||
| JP2008235871A |
Foreign References:
| KR1020090057689A | ||||
| WO2008093583A1 | ||||
| CN101595564A | ||||
| EP1995787A1 | ||||
| US20100044701 | ||||
| US20080176364 | ||||
| US20090141203 |
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