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Title:
表示装置
Document Type and Number:
Japanese Patent JP7228724
Kind Code:
B2
Abstract:
A semiconductor device includes a first and a second conductive films over an insulating surface; a first insulating film over the insulating surface and the first and the second conductive films; a semiconductor film overlapping with the first conductive film with the first insulating film provided therebetween; a third conductive film in contact with the semiconductor film; a fourth conductive film in contact with the semiconductor film and overlapping with the second conductive film with the first insulating film provided therebetween; a second insulating film including a thick region and a thin region, over the semiconductor film and the third and the fourth conductive films; a fifth conductive film overlapping with the semiconductor film with the second insulating film provided therebetween; and a sixth conductive film overlapping with the fourth conductive film over the thin region of the second insulating film.

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Inventors:
Nagaaki Shishido
Application Number:
JP2022018706A
Publication Date:
February 24, 2023
Filing Date:
February 09, 2022
Export Citation:
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Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/822; G09F9/30; H01L21/8234; H01L27/04; H01L27/06; H01L27/088; H01L29/786; H05B33/12; H05B33/14; H05B33/22; H10K50/00
Domestic Patent References:
JP2007041571A
Foreign References:
US20070001205
WO2011148537A1
US20150287742



 
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