Title:
表示装置
Document Type and Number:
Japanese Patent JP7265658
Kind Code:
B2
Abstract:
A transistor includes a gate electrode over a substrate, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film in contact with one surface of the oxide semiconductor film, and a pair of conductive films in contact with the oxide semiconductor film. A capacitor includes a metal oxide film over the gate insulating film and in contact with one of the pair of conductive films, an inorganic insulating film, and a first light-transmitting conductive film over the inorganic insulating film. A first gate line serving also as a gate electrode is connected so as to be able to select three sub-pixels of four sub-pixels, and a second gate line is connected so as to be able to select the remaining one of the four sub-pixels and also one sub-pixel in the next row.
Inventors:
Kusunoki Kouji
Hiroyuki Miyake
Hiroyuki Miyake
Application Number:
JP2022017863A
Publication Date:
April 26, 2023
Filing Date:
February 08, 2022
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
G09F9/30; G02F1/1368; G09G3/20; G09G3/3233; G09G3/36
Domestic Patent References:
| JP2004335467A | ||||
| JP2006075564A1 | ||||
| JP2008523446A | ||||
| JP2007041578A | ||||
| JP2014134794A |
Foreign References:
| US20040217694 | ||||
| KR1020080057040A |
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