PURPOSE: To obtain a distortion modulation superlattice structure body having periodic modulation of forbidden bandwidth in semiconductor layers having the same composition and doping concentration.

CONSTITUTION: A distorted superlattice layer 12 formed on a substrate 10 is constituted by alternately laminating a plurality of semiconductor crystal layers 112, 212 whose lattice constants are different. A distorted modulation semiconductor layer 16 is crystal-grown on a specified section 12a formed by cleaving the distorted superlattice layer 12. As the result, the distorted modulation semiconductor layer 16 inherits the distortion corresponding to the lattice constants of a plurality of the above-mentioned semiconductor crystal layers appearing on the specified section, and maintains the distortion in the crystal growth surface. Hence the distorted modulation semiconductor layer 16 is subjected to modulation of the forbidden bandwidth corresponding to the distortion given to the same crystal growth surface in the inside. That is, a superlattice structure body having a periodically repeating quantum well in the semiconductor layers having the same composition and doping concentration can be formed.