PURPOSE: To provide a distorted MQW optical device which enables the property improvement by the introduction of distortion without deteriorating light shut-in effect.
CONSTITUTION: MQW laser is made by stacking an n-type InP buffer layer 2, an n-type InGaAsP lower shut-in layer 3, an i-type MQW layer 4, a p-type InGaAsP upper light shut-in layer 5, and a p-type InP clad layer 6 in order on an n-type InP substrate 1. The MQW layer 4 is composed basically of an InxGa1-xAs well layer 12, where pull distortion of --0.5-2.00/o is introduced, and In0.82Ga0.18As0.4P0.6 barrier layers 11 of nondistortion, and an InyGa1-yAs shut-in layer 13, which is of approximately the same size, in the range of 0.5-2.0%, as a well layer 12 and in which compressed distortion of reverse polarity is introduced, is interposed between each well layer 12 and the barrier layer 11.
AIZAWA TAKUYA
KEE JII RABIKUMAARU
