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Patent Searching and Data


Title:
DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER
Document Type and Number:
Japanese Patent JP2008258453
Kind Code:
A
Abstract:

To prevent reduction of power of output light through spatial hole burning (carrier density decrease) caused in a /4 phase shift DFB laser.

The /4 phase shift DFB laser includes: an active layer 40 for generating stimulated emission light; a diffraction grating layer 30 formed on or under the active layer 40 for attaining a single longitudinal mode; and upper clad layers 41 and 41a and a lower clad layer 21 laminated with the active layer 40 and the diffraction grating layer 30 in between from the upper and lower directions. In the diffraction grating layer 30, a diffraction grating formation region 31, in which an uneven diffraction grating 33 is formed, and a diffraction grating non-formation region 32, in which the diffraction grating 33 is not formed, are formed by turns periodically in a range affected by an evanescent field of the stimulated emission light, which is subjected to wave guide in the active layer 40.


Inventors:
MIYAMURA SATOSHI
Application Number:
JP2007099980A
Publication Date:
October 23, 2008
Filing Date:
April 06, 2007
Export Citation:
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Assignee:
OKI ELECTRIC IND CO LTD
International Classes:
H01S5/12
Attorney, Agent or Firm:
Kakimoto Yasunari