Title:
DIVIDING SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JPS6258660
Kind Code:
A
Abstract:
PURPOSE: To improve yield through small allowance by dividing only a metal substrate portion and then dividing the laminated part by a simplified method using such as a slitter, shear, cutter, hot beam, etc.
CONSTITUTION: An amorphous silicon 2 and indium oxide transparent electrode 3 are sequentially stacked on a stainless substrate 1. An overcoat resin 4 is then stacked thereon is order to protect the silicon 2 and electrode 3. Only the substrate 1 is divided by the etching. The stacked part of silicon 2, electrode 3 and resin 4 is divided by the slitter, shear, cutter and hot beam. Thereby, allowance may be set small and yield may also be improved.
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Inventors:
TAGUSA YASUNOBU
Application Number:
JP19904585A
Publication Date:
March 14, 1987
Filing Date:
September 09, 1985
Export Citation:
Assignee:
SHARP KK
International Classes:
H01L21/301; C23F1/00; H01L21/78; (IPC1-7): C23F1/00; H01L21/78
Attorney, Agent or Firm:
Shintaro Nogawa
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