DOPING METHOD FOR AMORPHOUS SEMICONDUCTOR

Title:

DOPING METHOD FOR AMORPHOUS SEMICONDUCTOR

Document Type and Number:

Japanese Patent JPH04139721

Kind Code:

A

Abstract:

PURPOSE: To increase the doping efficiency and form a doped film of p-type (n-type) a-SiC, etc., having a wide band gap and high conductivity by doping an amorphous semiconductor while the semiconductor is exposed to the plasma of a doping gas.

CONSTITUTION: When a p-type a-SiC film is formed, a undoped a-SiC film which is richer in Si-C coupling than ordinary films is formed by arranging electromagnets below the RF electrodes used by an ordinary parallel plate type RF glow discharge method and impressing a magnetic field so as to increase the resolving efficiency of the gaseous starting material. Then the p-type a-SiC film is formed by doping, namely, post-doping the formed undoped film with the plasma of a doping gas prepared under a post-doping condition.

Inventors:

NINOMIYA KUNIMOTO
NISHIKUNI MASATO
NAKAMURA NOBORU
TSUDA SHINYA

Application Number:

JP26216990A

Publication Date:

May 13, 1992

Filing Date:

September 29, 1990

Export Citation:

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Assignee:

SANYO ELECTRIC CO

International Classes:

H01L21/225; H01L21/22; H01L21/265; (IPC1-7): H01L21/225; H01L21/265

Domestic Patent References:

JPS6453462A	1989-03-01
JPS63194326A	1988-08-11
JPH01196815A	1989-08-08
JPS6126219A	1986-02-05

Attorney, Agent or Firm:

Ryutaro Fujita

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