Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
DOUBLE EXPOSURE PHOTOMASK AND EXPOSURE METHOD
Document Type and Number:
Japanese Patent JP2005215135
Kind Code:
A
Abstract:

To provide a double exposure photomask with which a resist pattern having aimed dimensions can be formed corresponding to each pattern even when patterns with different pitches are present.

The mask includes a first photomask 100 where a dense pitch pattern is formed and a portion where a coarse pitch pattern is to be formed is masked, and a second photomask 110 where a coarse pitch pattern is formed and a portion where a dense pitch pattern is to be formed is masked.


Inventors:
ISHIDA SHINJI
MATSUURA SEIJI
Application Number:
JP2004019631A
Publication Date:
August 11, 2005
Filing Date:
January 28, 2004
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
NEC ELECTRONICS CORP
International Classes:
G03F1/26; G03F1/34; G03F1/68; G03F1/70; H01L21/027; (IPC1-7): G03F1/08; H01L21/027
Domestic Patent References:
JPH11260699A1999-09-24
JP2003209048A2003-07-25
JP2003149787A2003-05-21
Attorney, Agent or Firm:
Akio Miyazaki
Shinichi Iwata
Masaaki Ogata
Ishibashi Masayuki



 
Previous Patent: PHOTOSENSITIVE INORGANIC PASTE COMPOSITION, SHEETLIKE UNFIRED BODY FOR PRODUCTION OF PLASMA DISPLAY ...

Next Patent: ELECTROPHOTOGRAPHIC CARRIER AND ELECTROPHOTOGRAPHIC TWO-COMPONENT DEVELOPER USING SAME