PURPOSE: To enable a resist film adhered to the rear surface of a substrate due to intrusion of a radical within plasma of a reaction gas between this gas to be ashing-eliminated by providing a plurality of pins for forming a gap in reference to a heating means by supporting the rear surface of a substrate within a vacuum treating room.
CONSTITUTION: A heating means 5 is constituted by a plurality of infrared lamps and a plurality of pins 12 protruding toward the upper part through the heating means 5 is provided within a vacuum treating room 4. The rear surface of a substrate 1 is supported by the tip of the pin 12 so that a gap between the substrate 1 and the heating means 15 can be formed. Thus, a reaction gas radical enters the gap, thus ashing the resist film on the rear surface.
TAKADA TOSHINARI
WATABE TOKUO
JPS63136630A | 1988-06-08 | |||
JPS5770278A | 1982-04-30 | |||
JP62163937B |
Next Patent: PLASMA ASHING DEVICE