To obtain a drive circuit for a semiconductor device, which is prevented from being misoperated, even immediately after turning-on/turning-off of the semiconductor device and which can protect the semiconductor device from an excess current state, without damaging the degree of integration.
An excess current protection signal S6 is outputted by an overcurrent protection circuit 6, on the basis of sense voltage Vsense. A mask circuit 5 is so composed that a mask signal S5 maintains "L", until a capacitor C12 is charged and voltage V9 exceeds reference voltage VR, even if the input signal IN rises to "H" (an IGBT 1 is turned on), and an NPN bipolar transistor 23 is turned off. The output of an AND gate 25, which receives the mask signal S5 to one input and which receives the overcurrent protection signal S6 from the overcurrent protection circuit 6 to the other input, is outputted from a sense output terminal P2 as a blocking control signal SC_OUT. Finally, the output is imparted to an IGBT 1 gate terminal P3.
| JP2010029043 | INFORMATION PROCESSOR AND POWER SOURCE CONTROL METHOD |
| JPH11347450 | AIR CLEANER |
| JPH06120787A | 1994-04-28 | |||
| JPH06113526A | 1994-04-22 | |||
| JPS61184331U | 1986-11-17 | |||
| JPH05275999A | 1993-10-22 | |||
| JP2001345688A | 2001-12-14 |
Yoshitake Hidetoshi
Takahiro Arita