To improve a driver circuit operated with a charge pump voltage higher than that of a power unit.

A pre-slewing circuit 72 made up of a bipolar transistor and a CMOS transistor is provided to reduce a gate voltage of a power unit at a power stage. The gate voltage is reduced by the pre-slewing circuit 72 to a lower level enough to start a change in output voltage. The combination of the bipolar transistor and the CMOS transistor offers enough continuity, good inner separation, and high integration provided easily in a small chip area. As a result, good characteristics is realized for a high-performance integrated driver circuit 14.