To provide a driving circuit of an insulated gate type device capable of reducing temperature dependency for loss and noise at the time of turn-on.

A driving circuit of an IGBT (Insulate Gate Bipolar Transistor) 21 comprises a constant current source 1 for generating constant current, a switch circuit 2 for connecting the gate of the IGBT 21 to the supply potential Vcc side through the constant current source 1 during turn-on while connecting the gate of the IGBT 21 to the ground potential GND side during turn-off, and a discharge circuit 3 for turning off the IGBT 21. If a driving signal becomes a low level, a P channel field effect transistor 15 turns off while a P channel field effect transistor 14 turns on, so that the IGBT 21 can be turned on through the constant current source 1.