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Title:
DRIVING CIRCUIT FOR SEMICONDUCTOR SWITCHING ELEMENT
Document Type and Number:
Japanese Patent JPS63136817
Kind Code:
A
Abstract:

PURPOSE: To quickly execute a turn-on and to reduce the loss of switching at a turn-on time by providing more winding to a second transformer and connecting a series connection circuit consisting of the winding and a field effect transistor in parallel with a semiconductor switching element.

CONSTITUTION: The series connection circuit consisting of a diode 13, the field effect transistor(FET) 14 and a third winging NC of a current feedback transformer 8 is connected in parallel with a transistor 1. Since the FET 13 has a fast switching speed though its saturation voltage is high, it can send a current instead of the transistor 1 until the transistor 1 is turned off. And at the same time, since the current flows through the winding NC of the current feedback transformer 8 until the transistor 1, at least, becomes the saturated state, positive feedback is given to the base of transistor 1 through the current feedback transformer 8, the diode 9, the winding N3 and a switching element 2, so that the turn-on of the transistor 1 can be accelerated.


Inventors:
SANUKI NAGATO
KUWATA YUTAKA
KII YASUO
Application Number:
JP28396786A
Publication Date:
June 09, 1988
Filing Date:
November 28, 1986
Export Citation:
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Assignee:
ORIGIN ELECTRIC
NIPPON TELEGRAPH & TELEPHONE
International Classes:
H03K17/04; H03K17/12; H03K17/56; H03K17/567; H03K17/60; H03K17/61; (IPC1-7): H03K17/04; H03K17/56; H03K17/60
Domestic Patent References:
JPS60264120A1985-12-27
JPS61104641U1986-07-03



 
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