PURPOSE: To enable a transistor to be operated in a saturation region and to easily perform optimum design of a sense amplifier by making an output of a driving circuit as an input of a gate of a transistor for limiting current of a sense amplifier.

CONSTITUTION: A p-type, MISFET-P11 and a n-type MISFET-N11 constitute a complementary inverter. Also, p-type MISFET-P10 and a n-type MISFET-N10 are an intermediate potential generating circuit, and constitute a complementary inverter. In this case, when an input signal is L level, the N11 is turned off and the P11 is turned on. Then, when resistance of the P11, P10 and N10 in an ON state are respectively made R11, RP10, RN10, output potential can be made an intermediate potential decided by RN10/(RP11+RP10+RN10)×Vcc. Thereby, in a transistor CS for limiting current of a current Miller type sense amplifier, when input signals of driving circuit of all stages are H level, a gate of the transistor CS is not operated at a L level, but when an input signal is a L level, the gate is made an intermediate potential.