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Title:
DRIVING DEVICE FOR INSULATED GATE SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JP2014093836
Kind Code:
A
Abstract:

To provide a driving device for an insulated gate semiconductor element, which parallely drives a plurality of parallely-connected IGBTs equally in a constant current and with a good current balance, and which has a simple composition.

A driving device for an insulated gate semiconductor element comprises: a constant current circuit for supplying a constant current to a gate of an IGBT to cause the IGBT to perform an ON operation; a discharge circuit for grounding the gate of the IGBT to cause the IGBT to perform an OFF operation; and a switching circuit for causing one of the constant current circuit and the discharge circuit to operate depending on a control signal to turn on or turn off the IGBT. In particular, the driving device comprises: a current detection circuit for detecting a current flowing in the IGBT at the time of turn on of the IGBT; and a current adjustment circuit for feeding back the current detected by the current detection circuit to the constant current circuit to control an output current of the constant current circuit in accordance with turn-on characteristics of the IGBT.


Inventors:
MORI TAKAHIRO
Application Number:
JP2012242242A
Publication Date:
May 19, 2014
Filing Date:
November 01, 2012
Export Citation:
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Assignee:
FUJI ELECTRIC CO LTD
International Classes:
H02M1/08; H02M1/00
Domestic Patent References:
JP2002095240A2002-03-29
JP2004229382A2004-08-12
JP2009095166A2009-04-30
Attorney, Agent or Firm:
Yuji Hoshino
Kazunori Watanabe