DRIVING METHOD FOR INSULATED-GATE FIELD-EFFECT SEMICONDUCTOR DEVICE

Japanese Patent JP3383262

B2

PROBLEM TO BE SOLVED: To make a switching characteristic good by a method wherein the channel formation region of a patterned non-single-crystal semiconductor film contains oxygen and hydrogen at a specific value or lower, an electric field between a gate electrode and a drain region is set to a specific value or lower, and an insulated gate field-effect semiconductor device is driven in a state that no hysteresis is generated in a drain current/gate voltage characteristic.
SOLUTION: A non-single-crystal semiconductor film 2 which contains an amorphous structure is formed on the surface of a substrate 1. A gate insulating film 3 is laminated on it. After that, a part excluding a region 5 in which a field-effect semiconductor device is formed is removed by a plasma etching method. A pair of impurity regions 7, 8 are formed. The pair of impurity regions 7, 8, the non-single-crystal semiconductor film 2 and junction interfaces 17, 17' constitute a channel formation region. The region contains oxygen at 5×1018 cm-3 or lower and hydrogen. An electric field between a gate electrode and a drain region is set at a range of 3×166 V/cm or lower, and no hysteresis is generated in a drain current/gate voltage characteristic.

Shunpei Yamazaki

JP2000121972A

March 04, 2003

May 18, 1984

Click for automatic bibliography generation  

Semiconductor Energy Laboratory Co., Ltd.

H01L29/786; H01L21/20; H01L21/336; H01L27/12; (IPC1-7): H01L21/336; H01L21/20; H01L29/786

JP5550663A
JP5680138A
JP56108231A
JP5791517A
JP582073A
JP5827364A
JP5828867A
JP5893277A
JP58127382A
JP58192379A
JP58197775A
JP58206121A
JP5935423A
JP5975670A

Previous Patent: COMPOSITION CONTAINING POLYMER OF STAR-STRUCTURE, THE POLYMER AND USE THEREOF

Next Patent: NURSING LIFTER DEVICE