Title:
DRY ETCHING METHOD OF COMPOUND SEMICONDUCTOR
Document Type and Number:
Japanese Patent JPS60202941
Kind Code:
A
Abstract:
PURPOSE:To improve reproducibility, and to increase a selection ratio with a mask of a photo-resist, etc. and an etching rate by using a mixed gas of BCl3 and Cl2 as a reactive gas employed for reactive ion etching. CONSTITUTION:When total gas pressure is brought to 0.06Torr and high-frequency power to 0.42W/cm<2> by using a reaction gas in which Cl2 is mixed with BCl3 by 20vol%, the time (lag time) when AlGaAs is not etched is not generated owing to the removal of an Al oxide layer formed on the surface after the starting of etching. That is, the oxide-layer removing capability of the reactive gas is increased, and the controllability and reproducibility of the depth of etching are improved largely.
Inventors:
TAMURA HIDEO
Application Number:
JP5813584A
Publication Date:
October 14, 1985
Filing Date:
March 28, 1984
Export Citation:
Assignee:
TOSHIBA KK
International Classes:
H01L21/302; H01L21/3065; (IPC1-7): H01L21/302
Attorney, Agent or Firm:
Noriyuki Noriyuki