Title:
DRY ETCHING METHOD AND MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2000252259
Kind Code:
A
Abstract:
To form a gate electrode with a laminated tungsten having a excellent form-controllability, without breaking a gate insulating film.
A polysilicon film 3, reaction barrier film 4 of tungsten nitride, tungsten film 5, and offset film 6 of silicon nitride are sequentially formed on a gate insulating film 2. Then the offset film 6 is etched with a photoresist as a mask. Then with the offset film 6 as a mask, the tungsten film 5 is etched. Here, a mixed gas comprising fluorine group gas, chlorine, oxygen, and nitrogen is used as an etching gas.
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Inventors:
FUKUDA SEIICHI
Application Number:
JP4863899A
Publication Date:
September 14, 2000
Filing Date:
February 25, 1999
Export Citation:
Assignee:
SONY CORP
International Classes:
H01L21/302; C23F4/00; H01L21/3065; H01L21/3213; H01L29/78; H01L21/28; (IPC1-7): H01L21/3065; C23F4/00; H01L29/78
Attorney, Agent or Firm:
Akira Koike (2 outside)