Title:
DRY ETCHING METHOD
Document Type and Number:
Japanese Patent JP3301161
Kind Code:
B2
Abstract:
PURPOSE: To prevent generation of residue due to Cu in the case of dry etching Al-Si-Cu alloy.
CONSTITUTION: An Al multilayer film 5 which contains Al1%Si-0.5%Cu layer 3 is etched by using gas containing halogenated iodine such as ICl (iodine chloride), etc., while heating a wafer. The iodine chloride may be used only at the time of overetching. When normal chlorine gas is used, Cu2Cl2, etc., having low vapor pressure is generated to perform a function as a micromask 7, and hence a large quantity of acicular residue 5b remains generated. However, Cu can be removed in the form of Cu2I2 having a relatively high vapor pressure due to presence of iodine chemical species. Volatilization of AlClx of reaction product can be expedited by heating of a wafer. Accordingly, generation of the residue 5b and after-corrosion can be suppressed, and reliability of Al wirings is improved.
Inventors:
Toshiharu Yanagida
Application Number:
JP12308193A
Publication Date:
July 15, 2002
Filing Date:
April 28, 1993
Export Citation:
Assignee:
ソニー株式会社
International Classes:
H01L21/302; H01L21/3065; H01L21/3205; H01L21/3213; H01L23/52; (IPC1-7): H01L21/3065; H01L21/3213
Domestic Patent References:
| JP4329640A | ||||
| JP472725A | ||||
| JP4159718A |
Attorney, Agent or Firm:
Akira Koike (2 outside)