Title:
DRY ETCHING METHOD
Document Type and Number:
Japanese Patent JP3440735
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a dry etching method in which a silicon compound layer, particularly a low-dielectric constant interlayer insulating film represented by an SiOF film, can be dry-etched with high anisotropy and with high selectivity.
SOLUTION: When a silicon compound layer is dry-etched, an etching gas containing at least one kind of an inert gas selected from a group composed of krypton, xenon and radon is used. In this case, in an overteching operation, it is preferable to use at least one kind of an inert gas selected from a group composed of argon, neon and helium whose mass is comparatively small instead of at least one kind of the inert gas selected from the group composed of krypton, xenon and radon. In addition, it is preferable that a sulfur-based compound which can generate free sulfur in a plasma under a discharge dissociation condition is contained in the etching gas.
Inventors:
Toshiharu Yanagida
Application Number:
JP35873696A
Publication Date:
August 25, 2003
Filing Date:
December 26, 1996
Export Citation:
Assignee:
ソニー株式会社
International Classes:
H01L21/302; H01L21/3065; (IPC1-7): H01L21/3065
Domestic Patent References:
| JP774145A | ||||
| JP8222551A | ||||
| JP7335611A | ||||
| JP5511167A | ||||
| JP10172957A | ||||
| JP9172079A | ||||
| JP8222549A | ||||
| JP5315293A |
Attorney, Agent or Firm:
Noboru Tajime (1 person outside)