Title:
DRY ETCHING METHOD
Document Type and Number:
Japanese Patent JP3705977
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a dry etching method which restrains breakage of a gate oxide film when a metal gate electrode composed of metal material is dry- etched.
SOLUTION: Pulse modulated plasma is applied to dry etching of a metal gate electrode 4 composed of metal material containing tungsten. As a result, a dry etching method which does not cause damage to a gate oxide film 2 is obtained.
Inventors:
Michinari Yamanaka
Atsushi Shibata
Shigenori Hayashi
Hideo Nakagawa
Atsushi Shibata
Shigenori Hayashi
Hideo Nakagawa
Application Number:
JP34408199A
Publication Date:
October 12, 2005
Filing Date:
December 03, 1999
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
H01L21/302; H01L21/3065; H01L21/336; H01L29/78; (IPC1-7): H01L21/3065; H01L21/336
Domestic Patent References:
| JP6318573A | ||||
| JP11026433A | ||||
| JP11219938A | ||||
| JP10321399A | ||||
| JP11297678A | ||||
| JP11330048A | ||||
| JP2094476A | ||||
| JP63042173A | ||||
| JP11297679A | ||||
| JP11297678A | ||||
| JP11054510A |
Attorney, Agent or Firm:
Akio Miyai