PURPOSE: To do etching in atom layer unit by performing the control of desorption making use of the difference by the temperature of the balanced steam pressure of a reaction product and the control of desorption making use of the difference by the temperature of the steam pressure of a hydride.
CONSTITUTION: A GaAs substrate 11 is put in a chlorine etching chamber 12, and chlorine etching is done by the mixed gas that GaCl3 gas 17 is mixed in Cl2 gas 16 by the quantity of saturated steam pressure to the substrate temperature. Though Ga atoms on the substrate 11 react with Cl2 gas and produces GaCl3, those are not desorbed from the substrate and remain there. Next, when the substrate 11 is heated to the specified temperature, there appears the balanced steam pressure or less, and remaining GaCl3 evaporates and are desorbed. Next, the substrate 11 is shifted to a hydrogen etching chamber 13 and is irradiated with hydrogen atom beams so as to produce a hydride. And the etching is stopped at Ga face by controlling the temperature. Hereby, the etching can be done in atom layer unit.
| JPS51126344 | ETCHING METHOD |
| JPS61154129 | METHOD OF ETCHING ORGANIC RESIN |
NISHIYAMA IWAO
ASAKAWA KIYOSHI
