To provide a high-quality Dumet wire 1, having a flat part 9 on the outer surface thereof and moreover, having no minute cracks in a copper suboxide film of the outermost surface, at a low cost.
The Dumet wire 1 for glass-sealed semiconductor device is constituted of a core 2, a copper layer or a copper containing alloy layer 3 covering the periphery of the core 2, and the cuprous oxide film 4 covering the surface of the copper layer or the copper-containing alloy layer 3. In such a Dumet wire 1, generation of minute cracks in the cuprous oxide film 4 is prevented, by forming previously a flat part 9 on at least a part of surface of a wire consisting of the core 2 and the copper layer or the copper containing alloy layer 3 covering the periphery of the core, under the condition before forming the copper suboxide film 4.
SUGAI TAKESHI
KO KENSHIN
HO SHINNO
SUM PAC CORP
Higashio Masahiro
Torii Kazuhisa
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