To provide an epitaxial wafer for the AlGaInP-based semiconductor light-emitting element that is reduced in in-plane white turbidity and flat in top surface, while being improved in the productivity of a semiconductor light-emitting element.

The epitaxial wafer for the AlGaInP-based semiconductor light-emitting element stacks at least an n-type AlGaInP-based clad layer 4, an AlGaInP-based active layer 5, a p-type AlGaInP-based clad layer 6, and a GaP-based current dispersion layer 7 on an n-type GaAs substrate 2 in this order. The GaP-based current dispersion layer 7 includes a lower-side current dispersion layer 7a grown at a growth rate of 0.3 to 1.2 nm/sec on the p-type AlGaInP-based clad layer 6 and an upper-side current dispersion layer 7b grown at a growth rate of 1.2 to 3.0 nm/sec on the lower-side current dispersion layer 7a.