Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3197033
Kind Code:
B2
Abstract:
PURPOSE: To form an extremely thin SiO2/Si3N4 (stacked insulating film with good film thickness and electrical properties.
CONSTITUTION: After forming an Si3N4 film, thermal nitriding is performed. Then, the Si3N4 film is oxidized and an SiO2 film is formed on the surface of the Si3N4 film. Since resistance to oxidation of the Si3N4 film is improved by performing the thermal nitriding, an extreme increase in the film thickness of insulating film does not occur due to the oxidation of the Si3N4 film to its lower part even if forming the SiO2 film without reducing the oxidation, thereby, obtaining the good film thickness. Further, since the oxidation is not reduced, the stacked insulating film with a little leakage current and good electrical properties can be obtained.
Inventors:
Hiroki Kuroki
Masashi Takahashi
Nobuhiko Inoue
Masashi Takahashi
Nobuhiko Inoue
Application Number:
JP31527791A
Publication Date:
August 13, 2001
Filing Date:
November 05, 1991
Export Citation:
Assignee:
Miyazaki Oki Electric Co., Ltd.
Oki Electric Industry Co., Ltd.
Oki Electric Industry Co., Ltd.
International Classes:
H01L21/316; H01L21/318; (IPC1-7): H01L21/318; H01L21/316
Domestic Patent References:
| JP2186632A | ||||
| JP63318162A | ||||
| JP216763A | ||||
| JP21123A |
Attorney, Agent or Firm:
Kenji Ohnishi