Title:
PLASMA CLEANING AFTER-TREATMENT OF CVD DEVICE
Document Type and Number:
Japanese Patent JP3150408
Kind Code:
B2
Abstract:
PURPOSE: To lessen residual fluorine left in a reaction chamber after cleaning by a method wherein the reaction chamber is cleaned with reaction gas which contains fluorine atoms through a plasma dry etching method, and then the inside of the reaction chamber is coated with a film which adsorbs fluorine atoms.
CONSTITUTION: A wafer deposition process is executed after a pre-deposition process. Then, the plasma cleaning of the inside of a reaction chamber is done with reaction gas C2F6/O2 through a plasma dry etching method. The inside of the reaction chamber is coated with a plasma Si film 20 which adsorbs fluorine atoms by the use of reaction gas SiH4 after cleaning, and thus a cycle of deposition/cleaning is finished. Thereafter, a P-SiO film 21 is pre-deposited, and then a wafer deposition process is repeated again. A P-SiO film formed on a wafer is sharply decreased in fluorine content.
Inventors:
Koichi Mase
Kazuyuki Yahiro
Kazuyuki Yahiro
Application Number:
JP9027592A
Publication Date:
March 26, 2001
Filing Date:
March 16, 1992
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L21/205; C23C16/44; (IPC1-7): H01L21/205
Domestic Patent References:
| JP2240267A | ||||
| JP63215037A |
Attorney, Agent or Firm:
Eiji Morota