Title:
導波体を備えるエッジ発光型半導体レーザ
Document Type and Number:
Japanese Patent JP5611431
Kind Code:
B2
Abstract:
The edge-emitting semiconductor laser has a laser radiation (13) that produces an active layer (3), two waveguides (1,2) and two coating layers (4,5). The active layer is embedded in the former waveguide layer. The latter waveguide is provided adjacent to the latter coating layer, in which no active layer is embedded. A third coating layer (6) is arranged at a side of the latter waveguide, which is averted from the former wave guide.
Inventors:
ヴォルフガング シュミート
Application Number:
JP2013183113A
Publication Date:
October 22, 2014
Filing Date:
September 04, 2013
Export Citation:
Assignee:
オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ
International Classes:
H01S5/16; H01S5/042; H01S5/20
Attorney, Agent or Firm:
アインゼル Felix-Reinhardt
Takuya Kuno
Star Kimihiro
Takuya Kuno
Star Kimihiro