PURPOSE: To use amorphous silicone as a semiconductor layer of a second switching element by inserting a current limiting resistance in parallel between an EL element and the second switching element for causing the EL element to emit light.

CONSTITUTION: A first switching element Q1 is turned on according to the switching signal SCAN applied to the gate terminal so that an accumulation condenser CS is charged and discharged according to the light emitting signal DATA by the turning on and off actions. A second switching element Q2 is turned on by the application of a discharge voltage from the condenser CS to the gate. A light emitting element CEL is caused to emit light by an EL drive power source Va. With this constitution, a current limiting resistance Ri is inserted on the drain side of the element Q2. Since the discharge current from the capacitive load is restricted when the element Q2 is off, amorphous silicone may be used as a semiconductor layer for the element Q2 without using an offset structure.