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Title:
ELECTRET AND ITS FORMING METHOD AND STATIC ELECTRICITY RELAY
Document Type and Number:
Japanese Patent JP3638160
Kind Code:
B2
Abstract:

PURPOSE: To provide an electret that has a high melting point and can be introduced to a semiconductor manufacturing process for easily achieving fine machining and thinning.
CONSTITUTION: An SiO2 film 1 has a band structure consisting of a valence band 2, a forbidden band 3, and a conduction band 4, has a level for retainign an electric charge 5 at a deep electron energy level in the region of the forbidden band 3, thus constituting an electret.


Inventors:
Mitsuo Ichiya
Nakamura Takuro
Tomonari Yoshiaki
Fumihiro Kasano
Jackie Leviner
Didier Perino
Application Number:
JP10083695A
Publication Date:
April 13, 2005
Filing Date:
April 25, 1995
Export Citation:
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Assignee:
MATSUSHITA ELECTRIC WORKS,LTD.
Jackie Leviner
Didier Perino
International Classes:
C01B33/12; B81B1/00; C30B29/16; C30B31/22; H01G7/02; H01H59/00; H01L21/263; H01L21/31; H01L21/316; H02N1/00; H02N2/00; (IPC1-7): H02N1/00; C01B33/12; C30B29/16; C30B31/22; H01H59/00
Domestic Patent References:
JP5002976A
JP62185379A
JP2273513A
Attorney, Agent or Firm:
Keisei Nishikawa
Atsuo Mori