Title:
ELECTRET STRUCTURE AND ITS FORMING METHOD
Document Type and Number:
Japanese Patent JP2006245398
Kind Code:
A
Abstract:
To provide an electret structure having an excellent charge holding capacity.
A silicon oxide film 1 as an electret is formed on an insulating film 3 in a patterning. The insulating film 2 is formed so as to coat the silicon oxide film 1. The upper end of the silicon oxide film 1 is formed in a round shape while a section coating the upper end of the silicon oxide film 1 in the insulating film 2 is also formed in the round shape.
Inventors:
SHIMADA OSAMU
YAMAOKA TORU
MIYOSHI YUICHI
OGURA HIROSHI
YAMAOKA TORU
MIYOSHI YUICHI
OGURA HIROSHI
Application Number:
JP2005060577A
Publication Date:
September 14, 2006
Filing Date:
March 04, 2005
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01G7/02; H04R19/01; H04R19/04
Attorney, Agent or Firm:
Hiroshi Maeda
Hiroshi Koyama
Hiroshi Takeuchi
Takahisa Shimada
Yuji Takeuchi
Katsumi Imae
Atsushi Fujita
Kazunari Ninomiya
Tomoo Harada
Iseki Katsumori
Hiroshi Koyama
Hiroshi Takeuchi
Takahisa Shimada
Yuji Takeuchi
Katsumi Imae
Atsushi Fujita
Kazunari Ninomiya
Tomoo Harada
Iseki Katsumori
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