ELECTRET STRUCTURE, ITS FORMING METHOD AND ELECTRET TYPE CAPACITANCE SENSOR

Title:

ELECTRET STRUCTURE, ITS FORMING METHOD AND ELECTRET TYPE CAPACITANCE SENSOR

Document Type and Number:

Japanese Patent JP2009164539

Kind Code:

A

Abstract:

To provide an electret structure surely securing the moisture resistance regardless of the thickness of an inorganic electret member, and also to provide its forming method, and an electret type capacitance sensor.

A silicon microphone 100 has a back surface electrode substrate 200, a movable electrode substrate 300 disposed facing the back surface electrode substrate 200, and an insulator 400 provided between the back surface electrode substrate 200 and the movable electrode substrate 300. The back surface electrode substrate 200 has: a silicon substrate 201; a through-hole 204 formed on the silicon substrate 201; a silicon oxide film 202 embedded in a recessed part patterned and formed so as to evade the through-hole 204; a silicon nitride film 203 formed so as to cover the surface of the silicon substrate 201 and the silicon oxide film 202; and an electrode 205.

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Inventors:

IGUCHI YOSHINORI
TAJIMA TOSHIFUMI
GOTO MASAHIDE
YASUNO ISANAGA
KIDOKORO KENICHI

Application Number:

JP2008003314A

Publication Date:

July 23, 2009

Filing Date:

January 10, 2008

Export Citation:

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Assignee:

JAPAN BROADCASTING CORP
KOBAYASHI RIGAKU KENKYUSHO
RION CO

International Classes:

H01G7/02

Domestic Patent References:

JP2007267273A	2007-10-11
JP2006245398A	2006-09-14

Attorney, Agent or Firm:

Gunichiro Ariga

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