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Title:
ELECTRIC DEVICE
Document Type and Number:
Japanese Patent JP2014039043
Kind Code:
A
Abstract:

To provide a varactor with a high Q value in a normal CMOS process.

There is provided a varactor 10 having voltage-dependent capacitance between a first electrode CB and a second electrode CA. The varactor includes at least two parallel-connected electric devices having voltage-dependent capacitance. Each of the electric device includes: a semiconductor material 11 in a first region; semiconductor materials in a second region 13 and a third region 14 formed in the first region; an electric insulation layer 15 formed on a region in the first region corresponding to at least an isolation region 12; a conductive element 16 formed on a region of the insulation layer corresponding to at least the isolation region; the first electrode connected to the conductive element; and the second electrode connected to the second region and the third region. The second region, the third region, and the conductive element constitute a drain, a source, and a gate of a MOS transistor, respectively. The length of the gate is shorter than 2 μm.


Inventors:
LITWIN ANDREW
MADISON SVEN ERIK
Application Number:
JP2013185188A
Publication Date:
February 27, 2014
Filing Date:
September 06, 2013
Export Citation:
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Assignee:
ERICSSON TELEFON AB L M
International Classes:
H01L21/822; H01L21/8234; H01L27/04; H01L27/06; H01L29/861; H01L29/868; H01L29/93; H01L29/94; H03B5/12; H03K3/354; H01L
Domestic Patent References:
JPH09121025A1997-05-06
JPH07283729A1995-10-27
JPS6461070A1989-03-08
JPH02228063A1990-09-11
JPS62156853A1987-07-11
JPH02241061A1990-09-25
JPH06132728A1994-05-13
JPS5923569A1984-02-07
JPH01146351A1989-06-08
JPS6461070A1989-03-08
JPH02228063A1990-09-11
JPS62156853A1987-07-11
JPH02241061A1990-09-25
JPH06132728A1994-05-13
JPS5923569A1984-02-07
JPH01146351A1989-06-08
Attorney, Agent or Firm:
Miaki Kametani
Tetsuo Kanamoto
Koji Hagiwara
Kazuki Matsumoto