To provide a varactor with a high Q value in a normal CMOS process.
There is provided a varactor 10 having voltage-dependent capacitance between a first electrode CB and a second electrode CA. The varactor includes at least two parallel-connected electric devices having voltage-dependent capacitance. Each of the electric device includes: a semiconductor material 11 in a first region; semiconductor materials in a second region 13 and a third region 14 formed in the first region; an electric insulation layer 15 formed on a region in the first region corresponding to at least an isolation region 12; a conductive element 16 formed on a region of the insulation layer corresponding to at least the isolation region; the first electrode connected to the conductive element; and the second electrode connected to the second region and the third region. The second region, the third region, and the conductive element constitute a drain, a source, and a gate of a MOS transistor, respectively. The length of the gate is shorter than 2 μm.
MADISON SVEN ERIK
JPH09121025A | 1997-05-06 | |||
JPH07283729A | 1995-10-27 | |||
JPS6461070A | 1989-03-08 | |||
JPH02228063A | 1990-09-11 | |||
JPS62156853A | 1987-07-11 | |||
JPH02241061A | 1990-09-25 | |||
JPH06132728A | 1994-05-13 | |||
JPS5923569A | 1984-02-07 | |||
JPH01146351A | 1989-06-08 | |||
JPS6461070A | 1989-03-08 | |||
JPH02228063A | 1990-09-11 | |||
JPS62156853A | 1987-07-11 | |||
JPH02241061A | 1990-09-25 | |||
JPH06132728A | 1994-05-13 | |||
JPS5923569A | 1984-02-07 | |||
JPH01146351A | 1989-06-08 |
Tetsuo Kanamoto
Koji Hagiwara
Kazuki Matsumoto