To provide an electric field emission electron source having a long lifetime compared with a conventional one.
An electron passage part 5 in the electric field emission electronic source 10 has numerous silicon microcrystals 63 in a nanometer order in a part between a lower electrode 12 and a surface electrode 7 and numerous silicon oxide films 64 which are formed on the respective surfaces of the respective silicon microcrystals 63 and which have a smaller film thickness than the crystal particle diameter of the silicon microcrystal 63. In the lower electrode 12, the width becomes smaller compared with that of an electrode part 12a in which a connecting part 12b linking between the neighboring electronic source elements in the extending direction of the lower electrode 12 which constitutes a part of the electron source element. Therefore, the size of the area adhered to the lower electrode 12 can be made smaller than that of the conventional one in the electron passage part 5, and the size of the part adhered to an insulating substrate 11 can be made larger than that of the conventional one in the electron passage part 5.
WATABE YOSHIFUMI
TAKEGAWA YOSHIYUKI
AIZAWA KOICHI
KOMODA TAKUYA
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