Title:
ELECTRIC FIELD RADIATION ELECTRON SOURCE AND METHOD FOR MANUFACTURING
Document Type and Number:
Japanese Patent JP3508652
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide an electric field radiation electron source and method of fabricating it that enhances the electron emission effect with high withstand voltage.
SOLUTION: An electric field drift layer 6 is formed on the main surface of an n-type silicon substrate 1, having a surface electrode 7. An ohmic electrode 2 is formed in the inside of the silicon substrate 1. The strong electric field drift layer 6 is obtained by annealing a porous polycrystalline silicon layer formed by anode oxidizing process in an atmosphere of N2O or NO gas at 900°C for an hour. The polycrystalline layer thus obtained has high electron emission efficiency, low defect density, and high withstand voltage compared to the conventional silicon layer.
Inventors:
Hatai, Takashi
Komoda, Takuya
Aizawa, Koichi
Komoda, Takuya
Aizawa, Koichi
Application Number:
JP29595199A
Publication Date:
March 22, 2004
Filing Date:
October 18, 1999
Export Citation:
Assignee:
MATSUSHITA ELECTRIC WORKS LTD
International Classes:
H01J9/02; H01J1/312; (IPC1-7): H01J1/312; H01J9/02
Attorney, Agent or Firm:
西川 惠清 （外１名）