Title:
POWER DEPOSITION CONTROL OF INDUCTIVELY COUPLED PLASMA (ICP) REACTOR
Document Type and Number:
Japanese Patent JP2018014337
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide an inductively coupled plasma (ICP) reactor that suppresses electric field interference caused by a plurality of coils.SOLUTION: The inductively coupled plasma (ICP) reactor includes: a processing chamber forming a processing volume; and one or more induction coils disposed above a processing chamber lid 104. The lid 104 is a dielectric window consisting of a first surface 204 and a second surface 206 facing the interior of the processing chamber. The lid is made to have a shape having a spatially varying dielectric constant to provide a variety of power coupling of RF energy from the one or more induction coils to the processing volume.SELECTED DRAWING: Figure 2A
Inventors:
SAMER BANNA
GUNG TZA-JING
VLADIMIR KNYAZIK
KYLE TANTIWONG
DAN A MAROHL
VALENTIN N TODOROW
STEPHEN YUEN
GUNG TZA-JING
VLADIMIR KNYAZIK
KYLE TANTIWONG
DAN A MAROHL
VALENTIN N TODOROW
STEPHEN YUEN
Application Number:
JP2017172595A
Publication Date:
January 25, 2018
Filing Date:
September 08, 2017
Export Citation:
Assignee:
APPLIED MATERIALS INC
International Classes:
H05H1/46; H01L21/3065
Domestic Patent References:
JP2012038461A | 2012-02-23 | |||
JP2002534797A | 2002-10-15 | |||
JP2016534522A | 2016-11-04 | |||
JP2004006742A | 2004-01-08 | |||
JP2002252214A | 2002-09-06 | |||
JP2013149377A | 2013-08-01 | |||
JP2003059914A | 2003-02-28 |
Foreign References:
US6179955B1 | 2001-01-30 |
Attorney, Agent or Firm:
Yoshiaki Anzai