To provide an electro-optic device in which a TFT having excellent electrical characteristics is obtained without increasing the layout area, and to provide its manufacturing method.
The electro-optic device comprises a conductive shading layer 32 formed on a substrate 20, an insulating layer 31 formed on a substrate 20 to cover the conductive shading layer 32, a semiconductor layer 28 formed on the insulating layer 31, a first connection electrode 69 connecting a gate electrode (scanning line 16) electrically with the conductive shading layer 32 by penetrating the insulating layer 31, and a second connection electrode 51 provided directly under the channel formation region 28a of the semiconductor layer 28 and connecting the channel formation region 28a electrically with the conductive shading layer 32 by penetrating the insulating layer 31 wherein the channel formation region 28a of the semiconductor layer 28 is connected electrically with the gate electrode through the conductive shading layer 32.
Masatake Shiga
Masakazu Aoyama