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Title:
ELECTROCONDUCTIVE COMPOSITION, PHOTOSENSITIVE RESIST, ANTISTATIC AGENT AND PRODUCTION OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2000191916
Kind Code:
A
Abstract:

To obtain the subject composition exhibiting excellent reflection preventing function, antistatic ability, pattern transfer function, etc., by making the composition include a quaternary ammonium salt and an organosilicon polymer containing a specific polysilane.

This composition comprises at least (A) a quaternary ammonium salt (preferably a nitrogen-containing heterocyclic ammonium salt) and (B) an organosilicon polymer containing a polysilane having at least one repeating unit selected from repeating units of formula I and formula II (R1 and R2 are each a 1-20C alkyl, aryl or aralkyl). Preferably the component A contains a long-chain alkyl of ≥5 methylene carbons. The composition can form a reflection preventing film when it is applied to a substrate in the production of a semiconductor apparatus. Consequently the objective composition functioning as an electroconductive reflection preventing film having reflection preventing function, pattern transfer function and antistatic function can be provided.


Inventors:
HIRAOKA TOSHIRO
MATSUMOTO KAZUNORI
HAYASE SHUJI
SATO YASUHIKO
NAKASUGI TETSUO
Application Number:
JP37238398A
Publication Date:
July 11, 2000
Filing Date:
December 28, 1998
Export Citation:
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Assignee:
TOSHIBA CORP
International Classes:
H01L21/027; C08K5/19; C08K5/3445; C08L83/16; C09K3/16; G03F7/004; G03F7/075; (IPC1-7): C08L83/16; C08K5/19; C08K5/3445; C09K3/16; G03F7/004; G03F7/075; H01L21/027
Attorney, Agent or Firm:
Norio Ogo (1 outside)