Title:
電気銅めっき方法、電気銅めっき用含リン銅アノード及びこれらを用いてめっきされたパーティクル付着の少ない半導体ウエハ
Document Type and Number:
Japanese Patent JP4076751
Kind Code:
B2
Abstract:
The present invention pertains to an electrolytic copper plating method characterized in employing phosphorous copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating upon making the crystal grain size of said phosphorous copper anode 10 to 1500 µm when the anode current density during electrolysis is 3A/dm 2 or more. Provided are an electrolytic copper plating method and a phosphorous copper anode used in such electrolytic copper plating method capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath, and capable of preventing the adhesion of particles to a semiconductor wafer, as well as a semiconductor wafer plated with the foregoing method and anode having low particle adhesion.
Inventors:
Takeo Okabe
Reihiro Market
Junnosuke Sekiguchi
Hirohito Miyashita
Ichiro Sawamura
Reihiro Market
Junnosuke Sekiguchi
Hirohito Miyashita
Ichiro Sawamura
Application Number:
JP2001323265A
Publication Date:
April 16, 2008
Filing Date:
October 22, 2001
Export Citation:
Assignee:
Nikko Metal Co., Ltd.
International Classes:
B22D25/04; C22C9/00; C25D17/10; C25D7/12; C25D21/12; H01L21/288
Domestic Patent References:
| JP2002275698A | ||||
| JP2001323398A | ||||
| JP2003268595A |
Attorney, Agent or Firm:
Isamu Ogoshi
Yohei Kinoshita
Yohei Kinoshita