Title:
ELECTRODE OF NITRIDE SEMICONDUCTOR
Document Type and Number:
Japanese Patent JP2950192
Kind Code:
B2
Abstract:
PURPOSE: To improve various devices such as LEDs, LDs, photodetectors and the like using nitride semiconductors in reliability by a method wherein electrodes high in bonding strength to the nitride semiconductor are provided, or more concretely electrodes formed on the nitride semiconductor through the intermediary of an insulating film are enhanced in bonding strength.
CONSTITUTION: An electrode 10 electrically connected to a semiconductor nitride 4 is formed through the intermediary of an insulating film 5, and a metal thin film 6 higher in bonding strength to the electrode 10 than the insulating film 5 is formed between the insulating film 5 and the electrode 10.
Inventors:
YAMADA TAKAO
SENOO MASAYUKI
SENOO MASAYUKI
Application Number:
JP8242895A
Publication Date:
September 20, 1999
Filing Date:
April 07, 1995
Export Citation:
Assignee:
NICHIA KAGAKU KOGYO KK
International Classes:
H01L29/43; H01L21/28; H01L33/30; H01L33/40; H01L33/44; H01L33/62; H01S5/00; H01S5/042; H01S5/323; (IPC1-7): H01S3/18; H01L29/43; H01L33/00
Domestic Patent References:
| JP4242985A | ||||
| JP590331A | ||||
| JP1143259A | ||||
| JP653241A |
Attorney, Agent or Firm:
Aoyama Ryo (2 outside people)
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