Title:
ELECTRODE OF SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JPS5974622
Kind Code:
A
Abstract:
PURPOSE:To reduce the required area and insure a high reliability as an electrode of a transistor with a shallow emitter depth by forming contacts on a semicondctor substrate with polycrystalline silicon, metal silicide and tangsten. CONSTITUTION:Silicon compound layers 12, 13 on an Si substrate 11 which is to be a base of a transistor are removed by photoetching and an emitter forming part is exposed and polycrystalline Si 14 is selectively deposited only on Si under a prescribed condition. Then an impurity atom such as arsenic is introduced into Si 14 and after an emitter is formed by heat diffusion, palladium, platinum and Ni are deposited and metal silicide 15 is formed by thermal treatment. Then etching of metal is carried out in such a manner that only silicide 15 remains on Si 14 and tangsten 16 is deposited selectively on silicide 15 under a prescribed condition. Finally, Al and Al alloy 17 are deposited on the upper surface and an electrode is formed by photoetching.
Inventors:
KIKUCHI AKIRA
SAIDA HIROJI
MIZUO SHIYOUICHI
KOGIRIMA MASAHIKO
SAIDA HIROJI
MIZUO SHIYOUICHI
KOGIRIMA MASAHIKO
Application Number:
JP18455082A
Publication Date:
April 27, 1984
Filing Date:
October 22, 1982
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L29/43; H01L21/28; (IPC1-7): H01L21/28
Attorney, Agent or Firm:
Toshiyuki Usuda