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Title:
ELECTRODE STRUCTURE AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JPH03101233
Kind Code:
A
Abstract:

PURPOSE: To enhance the adhesion density between a lead frame and the projecting electrode on a substrate by providing an organic film, which has an opening width smaller than the width of the opening and where only the flat face of a barrier metal film is exposed, between the barrier metal film and the projecting electrode.

CONSTITUTION: An SiO2 film 2 is formed on an Si substrate 1, and Al is vacuum-deposited thereon and is patterned to form an Al electrode 3, and further PSG is grown by CVD so that it may cover the Al electrode 3, and an opening is provided, and a PSG film 4 is provided. Next, Ti is deposited on the whole face, and Pd is deposited on Ti, and a barrier metal film 5 is provided. Next, polyimide is applied on the barrier metal film 5, and an opening 13 is provided the center so that only the flat part of the barrier metal film is exposed, and a polyimide film 11 is formed. Next, on the polyimide layer 11, a resist for plating is formed, and this is patterned so as to form a resist pattern 15 where an opening 14 is provided. Next, Au plating is done, and after formation of a mushroom shaped Au bump 16, the resist pattern 15 is removed, and next the polyimide film 11 and the barrier metal film 5 are removed respectively to flatten the top side of the Au bump 12.


Inventors:
HASEGAWA HITOSHI
Application Number:
JP23728789A
Publication Date:
April 26, 1991
Filing Date:
September 14, 1989
Export Citation:
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Assignee:
FUJITSU LTD
International Classes:
H01L21/60; H01L21/321; (IPC1-7): H01L21/321
Attorney, Agent or Firm:
Aoki Akira (4 outside)



 
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