ELECTRODE STRUCTURE AND SEMICONDUCTOR DEVICE

Title:

ELECTRODE STRUCTURE AND SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JP2008258499

Kind Code:

A

Abstract:

To provide a method of manufacturing a semiconductor device in which a source electrode is formed to be commonly connected to a plurality of source regions formed on a main surface, current density can be made uniform by reducing the resistance in an in-plane direction of the source electrode, and the number of wires for connecting a source and a lead as well as positions where electrodes are bonded can be freely designed in a power MOS transistor.

An electrode structure according to the present invention comprises: a pad electrode 10a; a copper plating layer 10e formed on the pad electrode 10a by an electrolytic plating method; and a nickel plating layer 10f and a gold plating layer 10g that are formed by an electroless plating method to cover the upper and side surfaces of the copper plating layer 10e.

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Inventors:

OKADA KIKUO
KAMEYAMA KOJIRO
OIKAWA TAKAHIRO

Application Number:

JP2007100838A

Publication Date:

October 23, 2008

Filing Date:

April 06, 2007

Export Citation:

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Assignee:

SANYO ELECTRIC CO
SANYO SEMICONDUCTOR CO LTD

International Classes:

H01L29/78; H01L21/3205; H01L21/60; H01L23/52; H01L29/41; H01L29/417

Attorney, Agent or Firm:

Hiroshi Kakutani

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