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Title:
ELECTRODE STRUCTURE, SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, THERMAL HEAD, AND THERMAL PRINTER
Document Type and Number:
Japanese Patent JP2013045843
Kind Code:
A
Abstract:

To provide an electrode structure with improved shear strength.

An electrode structure C1 comprises: a substratum 2; an electrode 4 provided on the substratum 2; and a plated layer 14 provided on the electrode 4. The plated layer 14 includes a first portion 14a and a second portion 14b positioned on the first portion 14a. Since an area of the first portion 14a is greater than an area of the second portion 14b in a planar view, shear strength of the electrode structure C1 can be improved. It is thereby possible to provide an electrode structure with improved shear strength.


Inventors:
KATO KENICHI
Application Number:
JP2011181687A
Publication Date:
March 04, 2013
Filing Date:
August 23, 2011
Export Citation:
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Assignee:
KYOCERA CORP
International Classes:
H01L21/60; B41J2/335; B41J2/345; H01L21/3205; H01L21/768; H01L23/522
Domestic Patent References:
JP2007073919A2007-03-22
JPH0437033A1992-02-07
JPH04217324A1992-08-07
JPH04133330A1992-05-07
JP2000216184A2000-08-04
JPH0477230U1992-07-06
JP2008258499A2008-10-23
JP2011025633A2011-02-10
JP2007073919A2007-03-22
JPH0437033A1992-02-07
JPH04217324A1992-08-07
JP2006294704A2006-10-26



 
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