Title:
プラズマを生成するための電極、この電極を有するプラズマチャンバ、及び層又はプラズマをリアルタイム分析又はリアルタイム処理をするための方法
Document Type and Number:
Japanese Patent JP5809264
Kind Code:
B2
Abstract:
A RF electrode for generating, plasma in a plasma chamber comprising an optical feedthrough. A plasma chamber comprising an RF electrode and a counter-electrode with a substrate support for holding a substrate, wherein a high-frequency alternating field for generating the plasma can be formed between the RF electrode and the counter-electrode. The chamber comprising an RF electrode with an optical feedthrough. A method, for in situ analysis or in situ processing of a layer or plasma in a plasma chamber, wherein the layer is disposed on counter-electrode and an RF electrode is disposed on the side lacing the layer. Selection of an RF electrode having an optical feedthrough, and at least one step in which electromagnetic radiation is supplied through the optical feedthrough for purposes of analysis or processing of the layer or the plasma, and by at least one other step in which the scattered or emitted or reflected radiation is supplied to an analysis unit.
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Inventors:
Mutmann Stefan
Goldine Ard
Carlius Reinhardt
Hülsbeck Marx
Frunski Dotsumtory
Goldine Ard
Carlius Reinhardt
Hülsbeck Marx
Frunski Dotsumtory
Application Number:
JP2013518950A
Publication Date:
November 10, 2015
Filing Date:
July 07, 2011
Export Citation:
Assignee:
Forschungszentrum Jürich Gesellschaft Mitt Beschlenktel Haftung
International Classes:
G01N21/65; G01N21/68
Domestic Patent References:
| JP2003115477A | ||||
| JP2003503833A | ||||
| JP2006245097A | ||||
| JP2009505429A |
Other References:
WAGNER V , et.al.,Raman monitoring of semiconductor growth,Journal of Applied Physics,1994年 6月 1日,Vol.75, No.11,pp.7330-7333
Attorney, Agent or Firm:
Mitsufumi Esaki
Blacksmith
Ryota Imamura
Kiyota Eisho
Blacksmith
Ryota Imamura
Kiyota Eisho