PURPOSE: To provide an electroluminescence device suitable for an image storing type flat display of a compact structure.

CONSTITUTION: An EL element (a) is composed of a glass board 1, an upper transparent electrode 2, a first insulating film 3, a phosphor layer 4, a second insulating film 5 and a lower metallic electrode 6, and constructed like a dot- matrix by means of the upper and the lower electrodes. An electron emitting section (b) is arranged facing to the EL element (a) at a specified distance. The electron emitting section (b) is composed of a silicon substrate 7 and projections 8 produced on the substrate by etching at positions corresponding to respective dots constructed by the said electrodes. A definite bias voltage is applied to the EL element to utilize the hysteresis effect of the element. In such a condition, when the element is irradiated with electron beams from the electron emitting section at a voltage higher than the above bias voltage, dots are turned to ON state, and even when returned to the initial condition, the EL element is kept in luminous state. Thus the EL element can be provided with a memory effect.