To obtain a semiconductor electroluminescence diode, which has the end surface facing opposite to each other, both side surfaces facing each other and the upper and lower surfaces facing each other at one pair of intervals, and consists of a semiconductor material.
A main body 12 comprises an active layer, which is extended from an end surface 15 on one side of the end surfaces of the main body to one point, which is positioned at an interval from the other end surface of the main body, in the main body 12. The width of this active layer is formed narrower than the distance between both side surfaces of the main body, and the active layer is tapered so as to come to the one point and has a part adjacent to the other end surface of the main body. A first clad layer consisting of a material having a refractive index smaller than that of the active layer is located on the side, which faces the active layer, of the main body and is extended between the end part of the active layer and the other end surface of the main body. The area of a radiation energy, which is generated in the active layer and is radiated through the point of the active layer, is widened on the part of a second clad layer between the point of the active layer and the other end of the main body, so that the area of the beam of a radiation energy from this diode 10 is formed wider than that of the beam of the radiation energy which is formed in the active layer.
ANDREWS JAMES T
MENNA RAYMOND J
