To suppress lowering of the characteristic of absorbing an electromagnetic wave even in a short wavelength band and to make the title absorber be of a thin type by a method wherein vinylidene cyanide or a copolymer thereof is made a dielectric layer and a resistive film is provided at least on one surface of the layer.

Vinylidene cyanide or a copolymer thereof is made a dielectric layer 1 and a resistive film 2 is formed at least on one surface of this dielectric layer by using a thin film prepared by ion plating, evaporation, sputtering or the like of a metal oxide, a metal nitride or a mixture thereof. The material of this resistive film is selected from ITO(indium oxide/tin oxide), the indium oxide, the tin oxide, zinc oxide and titanium nitride, for instance, and the film thickness is 0.01-200μ preferably. Besides, a metal layer 3 is laminated on the surface of the dielectric layer whereon the resistive film is not formed, and moreover protective films 4 and 5 formed of an organic macromolecular film or sheet are laminated on the surfaces of the resistive film 2 and the metal layer 3 in the rear respectively.