Title:
ELECTROMAGNETIC WAVE SHIELDED TYPE SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3743427
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide an electromagnetic wave shielded type semiconductor device which can reduce electromagnetic noise and surge noise, while constitution and process are simple and automation is facilitated.
SOLUTION: A multilayer capacitor 6, which is formed on a wiring board 2 and constituted of ground electrode layers 32, 33, 35, 36, dielectric layers 41, 42 and signal electrode layers 34, is connected with a part located between a ground line and an input signal line or an output signal line. A semiconductor chip 1 is almost surrounded and covered by the ground electrode layers 33, 35, 36 and a metal cap 4. Electromagnetic noise and surge noise, superposed on the input signal line or the output signal line of the electromagnetic wave shielded type semiconductor device or wirings in the semiconductor device which are connected with the signal lines can be reduced by the multilayer capacitor 6. The ground electrode layers 32, 33, 35, 36 cover the semiconductor chip 1 together with the metal cap 4, so that incident electromagnetic noise can be reduced.
Inventors:
Masato Imai
Norio Kitao
Naohito Mizuno
Takashi Nagasaka
Toshio Sonobe
Kenji Kanamaru
Norio Kitao
Naohito Mizuno
Takashi Nagasaka
Toshio Sonobe
Kenji Kanamaru
Application Number:
JP2003031505A
Publication Date:
February 08, 2006
Filing Date:
July 01, 1994
Export Citation:
Assignee:
株式会社デンソー
International Classes:
H05K9/00; H01L23/00; H01L25/00; H05K3/46; (IPC1-7): H05K9/00; H01L23/00; H01L25/00; H05K3/46
Domestic Patent References:
| JP5036857A | ||||
| JP5304243A | ||||
| JP6097315A | ||||
| JP5299878A | ||||
| JP5243782A | ||||
| JP2281699A |
Attorney, Agent or Firm:
Hirohiko Usui
Daito Kato
Takashi Ito
Daito Kato
Takashi Ito